smd type 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 2SK3109 absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 200 v gate to source voltage v gss 30 v i d 10 a i dp * 30 a power dissipation t c =25 50 t a =25 1.5 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =200v,v gs =0 100 a gate leakage current i gss v gs = 30v,v ds =0 10 a gate to source cut off voltage v gs(off) v ds =10v,i d =1ma 2.5 4.5 v forward transfer admittance y fs v ds =10v,i d =5.0a 1.5 s drain to source on-state resistance r ds(on) v gs =10v,i d =5.0a 0.32 0.4 input capacitance c iss 400 pf output capacitance c oss 110 pf reverse transfer capacitance c rss 55 pf turn-on delay time t on 12 ns rise time t r 34 ns turn-off delay time t off 40 ns fall time tf 20 ns v ds =10v,v gs =0,f=1mhz i d =5.0a,v gs(on) =10v,v dd =100v,r g =10 features gate voltage rating 30 v low on-state resistance r ds(on) =0.4 max. (v gs =10v,i d =5.0a) low input capacitance c iss = 400 pf typ. (v ds =10v,v gs =0v) avalanche capability rated built-in gate protection diode surface mount device available smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors s m d ty p e m o s f e t s m d ty p e m o s f e t smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type smd type smd type smd type ic smd type product specification 4008-318-123 sales@twtysemi.com 1of 1 http://www.twtysemi.com
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